Invention Grant
- Patent Title: Adaptive endpoint detection for automated delayering of semiconductor samples
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Application No.: US16816695Application Date: 2020-03-12
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Publication No.: US11171048B2Publication Date: 2021-11-09
- Inventor: Sean O. Morgan-Jones , Sophia E. Weeks , Peter D. Carleson
- Applicant: FEI Company
- Applicant Address: US OR Hillsboro
- Assignee: FEI Company
- Current Assignee: FEI Company
- Current Assignee Address: US OR Hillsboro
- Agency: Klarquist Sparkman, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; G03F1/84

Abstract:
Adaptive endpoint detection is applied to delayering of a multi-layer sample utilizing a combination of dynamic and predetermined parameters. Tuned predetermined parameters, varying between layers of the sample, allow automated operation across multiple sites of a device. A semiconductor logic device is described, having a zone of thick metal layers and a zone of thin metal layers. The described techniques can be integrated with analysis operations and can be applied across a wide range of device types and manufacturing processes.
Public/Granted literature
- US20210287938A1 ADAPTIVE ENDPOINT DETECTION FOR AUTOMATED DELAYERING OF SEMICONDUCTOR SAMPLES Public/Granted day:2021-09-16
Information query
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