- 专利标题: CMOS image sensor structure with microstructures formed on semiconductor layer
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申请号: US16219492申请日: 2018-12-13
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公开(公告)号: US11177302B2公开(公告)日: 2021-11-16
- 发明人: Chien-Nan Tu , Yu-Lung Yeh , Hsing-Chih Lin , Chien-Chang Huang , Shih-Shiung Chen
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Maschoff Brennan
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.
公开/授权文献
- US20190131334A1 CMOS IMAGE SENSOR STRUCTURE 公开/授权日:2019-05-02