Invention Grant
- Patent Title: Memory device, electronic device, and associated read method
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Application No.: US16820795Application Date: 2020-03-17
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Publication No.: US11182302B2Publication Date: 2021-11-23
- Inventor: Chun-Lien Su , Shuo-Nan Hung , Chun-Hsiung Hung
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F12/0882 ; G06F12/0862 ; G11C7/22 ; G06F9/30 ; G06F12/0893

Abstract:
A memory device, an electronic device, and associated read method are provided. The electronic device includes the memory device and a host device, which are electrically connected to each other. The memory device includes a NAND flash memory and a control logic. The NAND flash memory includes a first physical page, and the first physical page includes a plurality of first acquisition-units. The control logic is electrically connected to the NAND flash memory. The control logic receives a first-page address corresponding to the first physical page from a host device during a first page-read duration. Data stored at the plurality of first acquisition-units are respectively transferred to the host device during a second page-read duration.
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