Method of manufacturing a semiconductor device including forming a gate insulating material layer on a protection layer and removing the gate insulation material layer and the protection layer on the first region

Invention Grant

US11183429B2 Method of manufacturing a semiconductor device including forming a gate insulating material layer on a protection layer and removing the gate insulation material layer and the protection layer on the first region 有权

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Patent Title: Method of manufacturing a semiconductor device including forming a gate insulating material layer on a protection layer and removing the gate insulation material layer and the protection layer on the first region
Application No.: US16709125

Application Date: 2019-12-10
Publication No.: US11183429B2

Publication Date: 2021-11-23
Inventor: Sung Min Kang , Kyung Min Kim , Young Mok Kim , Min Hee Uh
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR Suwon-si
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2019-0033293 20190325,KR10-2019-0064342 20190531
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L27/12 ; H01L21/84 ; H01L27/092 ; H01L21/8234

Method of manufacturing a semiconductor device including forming a gate insulating material layer on a protection layer and removing the gate insulation material layer and the protection layer on the first region

Abstract:

A method of manufacturing a semiconductor device includes providing a substrate including a first region and a second region, forming a first channel layer in the first region of the substrate, forming an isolation region in the substrate to electrically isolate a portion of the first region from a portion of the second region, etching an upper surface of the second region of the substrate, forming a protection layer covering the first channel layer in the first region of the substrate and the second region of the substrate, removing the protection layer on the second region of the substrate, forming a gate insulation material layer on the protection layer and on the second region of the substrate, and removing the gate insulation material layer and the protection layer on the first region of the substrate.

Public/Granted literature

US20200312727A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2020-10-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS