专利检索 ap:("Samsung Electronics Co., Ltd.") AND inv:"Sung Min Kang" 第 1 页

1.

发明授权
Method of manufacturing a semiconductor device including forming a gate insulating material layer on a protection layer and removing the gate insulation material layer and the protection layer on the first region 有权

公开(公告)号：US11183429B2

公开(公告)日：2021-11-23

申请号：US16709125

申请日：2019-12-10

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Min Kang , Kyung Min Kim , Young Mok Kim , Min Hee Uh

IPC分类号： H01L21/8238 , H01L27/12 , H01L21/84 , H01L27/092 , H01L21/8234

摘要： A method of manufacturing a semiconductor device includes providing a substrate including a first region and a second region, forming a first channel layer in the first region of the substrate, forming an isolation region in the substrate to electrically isolate a portion of the first region from a portion of the second region, etching an upper surface of the second region of the substrate, forming a protection layer covering the first channel layer in the first region of the substrate and the second region of the substrate, removing the protection layer on the second region of the substrate, forming a gate insulation material layer on the protection layer and on the second region of the substrate, and removing the gate insulation material layer and the protection layer on the first region of the substrate.