Techniques for forming RRAM cells with increased density are provided. In one aspect, a method of forming a RRAM device includes: providing an underlayer disposed on a substrate; patterning trenches in the underlayer; forming bottom electrodes at two different levels of the underlayer that includes first bottom electrodes at bottoms of the trenches and second bottom electrodes along a top surface of the underlayer in between the trenches; depositing an insulating layer on the first/second bottom electrodes; and forming top electrodes on the insulating layer, wherein the top electrodes include word lines, wherein the first and second bottom electrodes include bit lines that are orthogonal to the word lines. A RRAM device is also provided.