Invention Grant
- Patent Title: II-VI based non-Cd quantum dots, manufacturing method thereof and QLED using the same
-
Application No.: US16555718Application Date: 2019-08-29
-
Publication No.: US11186770B2Publication Date: 2021-11-30
- Inventor: Hee-Sun Yang , Eun-Pyo Jang
- Applicant: Hongik University Industry-Academia Cooperation Foundation
- Applicant Address: KR Seoul
- Assignee: Hongik University Industry-Academia Cooperation Foundation
- Current Assignee: Hongik University Industry-Academia Cooperation Foundation
- Current Assignee Address: KR Seoul
- Agency: Wolter Van Dyke Davis, PLLC
- Agent Eugene J. Molinelli; Michael Byrne
- Priority: KR10-2019-0057625 20190516
- Main IPC: H01L51/50
- IPC: H01L51/50 ; C09K11/56 ; C09K11/88 ; H01L51/00

Abstract:
The present disclosure provides II-VI based non-Cd visible light emitting quantum dots (QDs) and a manufacturing method thereof to solve the problems with broad full width at half maximum (FWHM) and low quantum efficiency. The present disclosure further provides a QD light emitting diode (QLED) using the II-VI based non-Cd visible light emitting QDs. The QDs according to the present disclosure include a II-VI based ternary ZnSeTe core, wherein a Se:Te ratio in the ZnSeTe core is 1:10 to 100:1. According to the present disclosure, it is possible to provide QDs that emit visible light ranging from red to blue by adjusting the Se:Te ratio in the II-VI based ternary ZnSeTe core.
Information query
IPC分类: