Invention Grant
- Patent Title: Method of manufacturing a semiconductor device and a semiconductor device
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Application No.: US16399669Application Date: 2019-04-30
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Publication No.: US11189490B2Publication Date: 2021-11-30
- Inventor: Georgios Vellianitis
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/66 ; H01L29/08 ; H01L29/04 ; H01L29/423 ; H01L29/78 ; H01L27/12 ; H01L21/84
Abstract:
In a method of manufacturing a semiconductor device, a single crystal oxide layer is formed over a substrate. After the single crystal oxide layer is formed, an isolation structure to define an active region is formed. A gate structure is formed over the single crystal oxide layer in the active region. A source/drain structure is formed.
Information query
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