Invention Grant
- Patent Title: Wafer quality inspection method and apparatus, and semiconductor device manufacturing method including the wafer quality inspection method
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Application No.: US16390345Application Date: 2019-04-22
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Publication No.: US11189533B2Publication Date: 2021-11-30
- Inventor: Jong-Hyun Choi , Seok-Bae Moon , Jae-Hyuk Choi , Won-Ki Park , Jong-Hwi Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0109722 20180913
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/66 ; H01J37/317

Abstract:
A method of inspecting a wafer quality includes injecting ions into a wafer using an ion beam in an ion implantation process, collecting data about the ion beam by using a Faraday cup, extracting first data from the data about the ion beam, extracting a wafer section from the first data, calculating a feature value of a wafer from the wafer section, and evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.
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Information query
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