Invention Grant
- Patent Title: Integrated device coupled to a capacitor structure comprising a trench capacitor
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Application No.: US16798161Application Date: 2020-02-21
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Publication No.: US11189686B2Publication Date: 2021-11-30
- Inventor: Jonghae Kim , Milind Shah , Periannan Chidambaram
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/498 ; H01L25/065 ; H01L23/31 ; H01L23/48

Abstract:
A package that includes a substrate, an integrated device coupled to the substrate, and a capacitor structure located between the substrate and the integrated device. The capacitor structure includes a capacitor substrate comprising a first trench, a first electrically conductive layer located in the first trench, a dielectric layer located over the first electrically conductive layer, and a second electrically conductive layer located over the dielectric layer. The first electrically conductive layer over the first trench, the dielectric layer and the second electrically conductive layer are configured as a first capacitor.
Public/Granted literature
- US20210098567A1 INTEGRATED DEVICE COUPLED TO A CAPACITOR STRUCTURE COMPRISING A TRENCH CAPACITOR Public/Granted day:2021-04-01
Information query
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