Invention Grant
- Patent Title: Multilayer varistor having a field-optimized microstructure
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Application No.: US17254707Application Date: 2019-07-02
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Publication No.: US11195643B2Publication Date: 2021-12-07
- Inventor: Thomas Feichtinger , Michael Hofstätter , Hermann Grünbichler
- Applicant: TDK Electronics AG
- Applicant Address: DE Munich
- Assignee: TDK Electronics AG
- Current Assignee: TDK Electronics AG
- Current Assignee Address: DE Munich
- Agency: Slater Matsil, LLP
- Priority: DE102018116221.9 20180704
- International Application: PCT/EP2019/067746 WO 20190702
- International Announcement: WO2020/007864 WO 20200109
- Main IPC: H01C7/10
- IPC: H01C7/10 ; H01C1/16

Abstract:
In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size DA, wherein the varistor material in the second regions has a second average grain size DB, and wherein DA
Public/Granted literature
- US20210217545A1 Multilayer Varistor Having a Field-Optimized Microstructure Public/Granted day:2021-07-15
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