Invention Grant
- Patent Title: Pattern-forming method
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Application No.: US16922010Application Date: 2020-07-07
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Publication No.: US11195714B2Publication Date: 2021-12-07
- Inventor: Hitoshi Osaki , Jeffrey Kmiec
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Element IP, PLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/306

Abstract:
A pattern-forming method includes forming a patterned coating film on a part of a surface layer of a base. The surface layer includes regions each of which includes a material that differs from each other. A part of the regions is the part of the surface layer on which the patterned coating film is formed. The patterned coating film includes a first polymer including at an end of a main chain or a side chain thereof a group including a first functional group that is capable of bonding to an atom present in the part of the region. An atom layer is directly or indirectly formed on the surface layer of the base by a vapor deposition, after the forming of the patterned coating film.
Information query
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