- 专利标题: Field-effect transistor structure and fabrication method
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申请号: US16681225申请日: 2019-11-12
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公开(公告)号: US11201246B2公开(公告)日: 2021-12-14
- 发明人: Clarissa Convertino , Cezar Bogdan Zota , Kirsten Emilie Moselund , Lukas Czornomaz , Davide Cutaia
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Jorge R. Maranto
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L29/66 ; H01L29/08 ; H01L29/40 ; H01L21/8234
摘要:
The present disclosure relates to a method for fabricating an FET structure. The method includes forming on a substrate a first semiconductor structure and an insulator structure covering the first semiconductor structure with a first insulator layer, forming on the first insulator layer a sacrificial layer extending to a reference plane, forming a second insulator layer on the reference plane, forming a first cavity through the second insulator layer, the sacrificial layer and the first insulator layer, thus exposing a surface of the first semiconductor structure, filling the first cavity with a second semiconductor structure extending from the surface at least up to the first reference plane, forming a third semiconductor structure on the second semiconductor structure, selectively removing the sacrificial layer, thus forming a second cavity, and filling the second cavity with a gate structure.
公开/授权文献
- US20210143282A1 FIELD-EFFECT TRANSISTOR STRUCTURE AND FABRICATION METHOD 公开/授权日:2021-05-13