Invention Grant
- Patent Title: In-situ full wafer metrology system
-
Application No.: US16818499Application Date: 2020-03-13
-
Publication No.: US11204312B2Publication Date: 2021-12-21
- Inventor: Ami Sade , Todd Egan , Shay Assaf , Jacob Newman
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: G01N21/01
- IPC: G01N21/01 ; G01B11/06 ; G01N21/21 ; G01N21/55
Abstract:
Full wafer in-situ metrology chambers and methods of use are described. The metrology chambers include a substrate support and a sensor bar that are rotatable relative to each other. The sensor bar includes a plurality of sensors at different radii from a central axis.
Public/Granted literature
- US20210285865A1 IN-SITU FULL WAFER METROLOGY SYSTEM Public/Granted day:2021-09-16
Information query
