Methods and apparatus for substrate edge cleaning

    公开(公告)号:US10217650B2

    公开(公告)日:2019-02-26

    申请号:US15264082

    申请日:2016-09-13

    摘要: A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.

    Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
    8.
    发明授权
    Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film 有权
    激光和等离子体蚀刻晶片切割与双面UV固化粘合膜

    公开(公告)号:US08969177B2

    公开(公告)日:2015-03-03

    申请号:US13917568

    申请日:2013-06-13

    摘要: Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.

    摘要翻译: 激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜。 形成覆盖在晶片上形成的IC的掩模,以及提供与IC的接口的任何凸块。 半导体晶片通过双面UV固化粘合剂膜耦合到载体基板。 通过激光划线将掩模图案化以提供具有间隙的图案化掩模。 图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片,以对IC进行单片化。 UV固化粘合剂膜通过载体的UV照射部分固化。 然后将分离的IC从仍然附着到载体基底上的部分固化的粘合剂膜分离,例如通过拾取和放置机单独分离。 然后可以进一步固化可UV固化的粘合剂膜,以使膜完全从载体基材上除去。

    OBTAINING SUBSTRATE METROLOGY MEASUREMENT VALUES USING MACHINE LEARNING

    公开(公告)号:US20220397515A1

    公开(公告)日:2022-12-15

    申请号:US17344788

    申请日:2021-06-10

    摘要: A machine learning model trained to provide metrology measurements for a substrate is provided. Training data generated for a prior substrate processed according to a prior process is provided to train the model. The training data includes a training input including a subset of historical spectral data extracted from a normalized set of historical spectral data collected for the prior substrate during the prior process. The subset of historical spectral data includes an indication of historical spectral features associated with a particular type of metrology measurement. The training data also includes a training output including a historical metrology measurement obtained for the prior substrate, the historical metrology measurement associated with the particular type of metrology measurement. Spectral data is collected for a current substrate processed according to a current process. A subset of current data extracted from a normalized set of the spectral data for the current substrate is provided as input to the trained model. Metrology measurement data for the current substrate is extracted from one or more outputs of the trained model.