Invention Grant
- Patent Title: Semiconductor structure with an air gap
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Application No.: US16835349Application Date: 2020-03-31
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Publication No.: US11205609B2Publication Date: 2021-12-21
- Inventor: Ching-Pin Hsu , Chih-Jung Wang , Chu-Chun Chang , Kuo-Yuh Yang , Chia-Huei Lin , Purakh Raj Verma
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202010078703.1 20200203
- Main IPC: H01L23/482
- IPC: H01L23/482 ; H01L21/02 ; H01L21/762 ; H01L21/768 ; H01L23/485

Abstract:
A semiconductor structure with an air gap includes a dielectric stack having a first dielectric layer on a substrate, a second dielectric layer on the first dielectric layer, and a third dielectric layer on the second dielectric layer. A first conductive layer and a second conductive layer are disposed in the dielectric stack. The first conductive layer and the second conductive layer are coplanar. A cross-like-shaped air gap is disposed in the dielectric stack between the first and second conductive layers. An oxide layer is disposed on a sidewall of the second dielectric layer within the cross-like-shaped air gap.
Public/Granted literature
- US20210242110A1 SEMICONDUCTOR STRUCTURE WITH AN AIR GAP Public/Granted day:2021-08-05
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