A solid-state image sensor including a semiconductor substrate having photoelectric conversion elements being two-dimensionally formed therein, and a color filter layer formed on the semiconductor substrate and having color filters of colors being two-dimensionally formed therein in a pattern such that the color filters correspond respectively to the photoelectric conversion elements. The color filter layer satisfies formulas (1) and (2): 200≤A≤700  (1) C≤A+200  (2) where A represents a thickness in nm of a first-color color filter of a first color among the colors, and C represents a thickness in nm of color filters of colors other than the first color.