Solid-state image sensor and method of manufacturing the same

    公开(公告)号:US11205671B2

    公开(公告)日:2021-12-21

    申请号:US16454157

    申请日:2019-06-27

    Abstract: A solid-state image sensor including a semiconductor substrate having photoelectric conversion elements being two-dimensionally formed therein, and a color filter layer formed on the semiconductor substrate and having color filters of colors being two-dimensionally formed therein in a pattern such that the color filters correspond respectively to the photoelectric conversion elements. The color filter layer satisfies formulas (1) and (2): 200≤A≤700  (1) C≤A+200  (2) where A represents a thickness in nm of a first-color color filter of a first color among the colors, and C represents a thickness in nm of color filters of colors other than the first color.

    Solid-state imaging device and method of producing solid-state imaging device

    公开(公告)号:US10998363B2

    公开(公告)日:2021-05-04

    申请号:US16655357

    申请日:2019-10-17

    Abstract: A solid-state imaging device including a semiconductor substrate including photoelectric conversion elements, and having color filters of plural colors formed on the semiconductor substrate and positioned in correspondence to the photoelectric conversion elements, a first visible-light transmissive layer formed between the semiconductor substrate and the color filters, and second visible-light transmissive layers each formed between adjacent color filters. The second visible-light transmissive layers include a same material as the first visible-light transmissive layer and are continuous with the first visible-light transmissive layer. The color filters having a largest area among the color filters of the plural colors each have an edge portion being continuous with an edge portion of a corresponding one of the second visible-light transmissive layers, and the color filters having the largest area each have a side wall on which a reaction product layer including a material forming the first visible-light transmissive layer is formed.

    SOLID-STATE IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190319058A1

    公开(公告)日:2019-10-17

    申请号:US16454157

    申请日:2019-06-27

    Abstract: A solid-state image sensor including a semiconductor substrate having photoelectric conversion elements being two-dimensionally formed therein, and a color filter layer formed on the semiconductor substrate and having color filters of colors being two-dimensionally formed therein in a pattern such that the color filters correspond respectively to the photoelectric conversion elements. The color filter layer satisfies formulas (1) and (2): 200≤A≤700  (1) C≤A+200  (2) where A represents a thickness in nm of a first-color color filter of a first color among the colors, and C represents a thickness in nm of color filters of colors other than the first color.

Patent Agency Ranking