Invention Grant
- Patent Title: Semiconductor device including trench isolation layer and method of forming the same
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Application No.: US16780810Application Date: 2020-02-03
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Publication No.: US11211284B2Publication Date: 2021-12-28
- Inventor: Juyeon Kim , Hanmei Choi , Sukjin Chung , Bongjin Kuh , Changyong Kim , Hakyu Seong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2019-0064330 20190531
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02
Abstract:
A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.
Public/Granted literature
- US20200381292A1 SEMICONDUCTOR DEVICE INCLUDING TRENCH ISOLATION LAYER AND METHOD OF FORMING THE SAME Public/Granted day:2020-12-03
Information query
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