Invention Grant
- Patent Title: Device structure
-
Application No.: US16691296Application Date: 2019-11-21
-
Publication No.: US11211319B2Publication Date: 2021-12-28
- Inventor: Hsu-Nan Fang , Chun-Jun Zhuang , Chen Yuan Weng
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/528 ; H01L23/544
Abstract:
A device structure includes a first electronic structure and a plurality of first electric contacts. The first electronic structure has a surface and a center. The first electric contacts are exposed from the surface. The first electric contacts are spaced by a pitch that increases with increasing distance from the center.
Public/Granted literature
- US20210159156A1 DEVICE STRUCTURE Public/Granted day:2021-05-27
Information query
IPC分类:
