Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16760052Application Date: 2018-11-27
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Publication No.: US11211500B2Publication Date: 2021-12-28
- Inventor: Shunpei Yamazaki , Hiromi Sawai , Ryo Tokumaru , Toshihiko Takeuchi , Tsutomu Murakawa , Sho Nagamatsu , Tomoaki Moriwaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2017-235326 20171207,JPJP2017-235327 20171207
- International Application: PCT/IB2018/059320 WO 20181127
- International Announcement: WO2019/111096 WO 20190613
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/105 ; H01L27/12 ; H01L29/24 ; H01L21/02 ; H01L29/66
Abstract:
A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third oxide over the second oxide, a second insulator over the third oxide, a third conductor that is located over the second insulator and overlaps with the third oxide, a third insulator that is located over the first insulator and in contact with a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor, and a fourth insulator over the third conductor, the second insulator, the third oxide, and the third insulator. The fourth insulator is in contact with a top surface of each of the third conductor, the second insulator, and the third oxide.
Information query
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