- 专利标题： Advanced copper interconnects with hybrid microstructure
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申请号： US16835056申请日： 2020-03-30
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公开(公告)号： US11222817B2公开(公告)日： 2022-01-11
- 发明人: Daniel C. Edelstein , Chih-Chao Yang
- 申请人： Tessera, Inc.
- 申请人地址： US CA San Jose
- 专利权人： Tessera, Inc.
- 当前专利权人： Tessera, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Lee & Hayes, P.C.
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/768 ; H01L23/532 ; H01L21/02 ; H01L23/528 ; H01L21/288
摘要：
A device relates to a semiconductor device. The semiconductor device includes a narrow-line bamboo microstructure integrated within a metal layer of the semiconductor device and a narrow-line polycrystalline microstructure. The narrow-line polycrystalline microstructure is integrated within the same metal layer as the narrow-line bamboo microstructure.
公开/授权文献
- US20200227317A1 ADVANCED COPPER INTERCONNECTS WITH HYBRID MICROSTRUCTURE 公开/授权日：2020-07-16
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