Invention Grant
- Patent Title: Metal aluminum gallium indium carbide thin films as liners and barriers for interconnects
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Application No.: US16326135Application Date: 2016-09-29
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Publication No.: US11227798B2Publication Date: 2022-01-18
- Inventor: Scott B. Clendenning , Florian Gstrein
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2016/054302 WO 20160929
- International Announcement: WO2018/063208 WO 20180405
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L21/285

Abstract:
Disclosed are electronic device assemblies, computing devices, and related methods. An electronic device assembly or a computing device includes an interlayer dielectric region between a first region and a second region, a conductive interlayer structure formed through the interlayer dielectric region, and a barrier region formed around the conductive interlayer structure. The conductive interlayer structure includes a composition of Ml-Alm—X1n—X2p—Cq—Or, wherein M comprises a metal selected from one or more of titanium, zirconium, hafnium, tantalum, niobium and vanadium; C comprises carbon; O comprises oxygen; X1 comprises gallium; X2 comprises indium; and l, m, n, p, q and r represent an atomic percent of an element in the barrier region that can be 0 percent, but n and p cannot both be 0 percent. A method includes forming the barrier region within a passage through the interlayer dielectric region.
Public/Granted literature
- US20190189505A1 METAL ALUMINUM GALLIUM INDIUM CARBIDE THIN FILMS AS LINERS AND BARRIERS FOR INTERCONNECTS Public/Granted day:2019-06-20
Information query
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