Invention Grant
- Patent Title: RF frequency tuning in silicon photoconductive-switch-based high power microwave systems
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Application No.: US16542676Application Date: 2019-08-16
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Publication No.: US11243418B2Publication Date: 2022-02-08
- Inventor: John E. McGeehan
- Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Current Assignee: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Maine Cernota & Rardin
- Agent Scott J. Asmus
- Main IPC: G02F1/03
- IPC: G02F1/03

Abstract:
An RF frequency tuning-in-silicon photoconductive-switch-based high power microwave system including a cradle; a transmission line proximate the cradle; a photosensitive silicon material switch component also proximate the cradle; a laser light source having a varied illumination incidence location on the photosensitive material; and a laser alignment component providing the location of the illumination incidence location on the photosensitive material; whereby the inductance of the switch varies as a function of the incidence location of the illumination on the photosensitive material.
Public/Granted literature
- US20210048694A1 RF FREQUENCY TUNING IN SILICON PHOTOCONDUCTIVE-SWITCH-BASED HIGH POWER MICROWAVE SYSTEMS Public/Granted day:2021-02-18
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