Invention Grant
- Patent Title: Profiled sputtering target and method of making the same
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Application No.: US15947586Application Date: 2018-04-06
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Publication No.: US11244815B2Publication Date: 2022-02-08
- Inventor: Shih-Yao Lin , Stephane Ferrasse , Jaeyeon Kim , Frank C. Alford
- Applicant: Honeywell International Inc.
- Applicant Address: US NJ Morris Plains
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morris Plains
- Agency: Faegre Drinker Biddle & Reath LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34

Abstract:
A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.
Public/Granted literature
- US20180308671A1 PROFILED SPUTTERING TARGET AND METHOD OF MAKING THE SAME Public/Granted day:2018-10-25
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