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公开(公告)号：US20210050194A1
公开(公告)日：2021-02-18
申请号：US16985998
申请日：2020-08-05
Applicant: Honeywell International Inc.
Inventor： Marc D. Ruggiero , Stephane Ferrasse , Frank C. Alford , Susan D. Strothers , Patrick K. Underwood
Abstract: The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.
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公开(公告)号：US10851447B2
公开(公告)日：2020-12-01
申请号：US15824283
申请日：2017-11-28
Applicant: Honeywell International Inc.
Inventor： Stephane Ferrasse , Wayne D. Meyer , Frank C. Alford , Marc D. Ruggiero , Patrick K. Underwood , Susan D. Strothers
Abstract: Disclosed herein is a method of forming a high strength aluminum alloy. The method comprises heating an aluminum material to a solutionizing temperature for a solutionizing time such that the magnesium and zinc are dispersed throughout the extruded aluminum material to form a solutionized aluminum material. The method includes quenching the solutionized aluminum material to form a quenched aluminum material. The method also includes aging the quenched aluminum material to form an aluminum alloy, then subjecting the aluminum alloy to an ECAE process to form a high strength aluminum alloy.
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公开(公告)号：US20180308671A1
公开(公告)日：2018-10-25
申请号：US15947586
申请日：2018-04-06
Applicant: Honeywell International Inc.
Inventor： Shih-Yao Lin , Stephane Ferrasse , Jaeyeon Kim , Frank C. Alford
CPC classification number: H01J37/3423 , C23C14/3407 , H01J37/3432 , H01J37/3435 , H01J37/3491
Abstract: A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.
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公开(公告)号：US11248286B2
公开(公告)日：2022-02-15
申请号：US16820261
申请日：2020-03-16
Applicant: Honeywell International Inc.
Inventor： Stephane Ferrasse , Susan D. Strothers , Patrick K. Underwood , Marc D. Ruggiero , Wayne D. Meyer , Lucia M. Feng , Frank C. Alford
IPC: C22F1/04 , C22F1/047 , C22F1/053 , C22F1/057 , C22F1/00 , C22C21/02 , C22C21/06 , C22C21/10 , C22F1/043 , B21C23/00
Abstract: A method of forming a high strength aluminum alloy. The method comprises subjecting an aluminum material containing at least one of magnesium, manganese, silicon, copper, and zinc at a concentration of at least 0.1% by weight to an equal channel angular extrusion (ECAE) process. The method produces a high strength aluminum alloy having an average grain size from about 0.2 μm to about 0.8 μm and a yield strength from about 300 MPa to about 650 MPa.
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5.发明申请公开(公告)号：US20190233935A1
公开(公告)日：2019-08-01
申请号：US16247232
申请日：2019-01-14
Applicant: Honeywell International Inc.
Inventor： Stephane Ferrasse , Frank C. Alford , Ira G. Nolander , Erik L. Turner , Patrick Underwood
CPC classification number: C23C14/3414 , C22C9/05 , C22F1/08
Abstract: A method of forming a copper manganese sputtering target including subjecting a copper manganese billet to a first unidirectional forging step, heating the copper manganese billet to a temperature from about 650° C. to about 750° C., subjecting the copper manganese billet to a second unidirectional forging step, and heating the copper manganese billet to a temperature from about 500° C. to about 650° C. to form a copper alloy.
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Patent Agency Ranking
公开(公告)号：US20180323047A1
公开(公告)日：2018-11-08
申请号：US15773005
申请日：2016-10-27
Applicant: Honeywell International Inc.
Inventor： Susan D. Strothers , Kevin B. Albaugh , Stephane Ferrasse
CPC classification number: H01J37/3435 , B23K15/0086 , B23K26/342 , B33Y10/00 , B33Y70/00 , B33Y80/00 , C23C14/3407
Abstract: A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including forming a substantially planar first side in a first plane, forming a plurality of flow barriers joined to the first side, the plurality of flow barriers having a thickness in a direction perpendicular to the first plane; forming a plurality of flow channels defined between the plurality of flow barriers; and forming a substantially planar second side in the first plane, and uniformly solidifying the material such that the backing plate comprises a uniform, continuous material structure throughout the first side, the plurality of flow barriers, and the second side.
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公开(公告)号：US20180155811A1
公开(公告)日：2018-06-07
申请号：US15824149
申请日：2017-11-28
Applicant: Honeywell International Inc.
Inventor： Stephane Ferrasse , Susan D. Strothers , Patrick K. Underwood , Marc D. Ruggiero , Wayne D. Meyer , Lucia M. Feng , Frank C. Alford
CPC classification number: C22F1/053 , B21C23/001 , B21C23/002 , C22C21/02 , C22C21/06 , C22C21/10 , C22F1/002 , C22F1/043 , C22F1/047
Abstract: A method of forming a high strength aluminum alloy. The method comprises subjecting an aluminum material containing at least one of magnesium, manganese, silicon, copper, and zinc at a concentration of at least 0.1% by weight to an equal channel angular extrusion (ECAE) process. The method produces a high strength aluminum alloy having an average grain size from about 0.2 μm to about 0.8 μm and a yield strength from about 300 MPa to about 650 MPa.
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公开(公告)号：US12252770B2
公开(公告)日：2025-03-18
申请号：US18131075
申请日：2023-04-05
Applicant: Honeywell International Inc.
Inventor： Stephane Ferrasse , Frank C. Alford , Susan D. Strothers , Patrick Underwood
Abstract: A high strength aluminum alloy material comprises aluminum as a primary component and at least one of magnesium and silicon as a secondary component at a concentration of at least 0.2% by weight. The material has a Brinell hardness of at least 90 BHN, a yield strength of at least 250 MPa, an ultimate tensile strength of at least 275 MPa, and a percent elongation of at least 11.5%.
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公开(公告)号：US20230243027A1
公开(公告)日：2023-08-03
申请号：US18131075
申请日：2023-04-05
Applicant: Honeywell International Inc.
Inventor： Stephane Ferrasse , Frank C. Alford , Susan D. Strothers , Patrick Underwood
CPC classification number: C22F1/047 , B21C23/002 , C22C21/08
Abstract: A high strength aluminum alloy material comprises aluminum as a primary component and at least one of magnesium and silicon as a secondary component at a concentration of at least 0.2% by weight. The material has a Brinell hardness of at least 90 BHN, a yield strength of at least 250 MPa, an ultimate tensile strength of at least 275 MPa, and a percent elongation of at least 11.5%.
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公开(公告)号：US11450516B2
公开(公告)日：2022-09-20
申请号：US16985998
申请日：2020-08-05
Applicant: Honeywell International Inc.
Inventor： Marc D. Ruggiero , Stephane Ferrasse , Frank C. Alford , Susan D. Strothers , Patrick K. Underwood
Abstract: The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.
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