- 专利标题： Staggered stacked vertical crystalline semiconducting channels
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申请号： US16821604申请日： 2020-03-17
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公开(公告)号： US11251182B2公开(公告)日： 2022-02-15
- 发明人: Tsung-Sheng Kang , Tao Li , Ardasheir Rahman , Praveen Joseph , Indira Seshadri , Ekmini Anuja De Silva
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Randall Bluestone
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/78 ; H01L21/8238 ; H01L27/12 ; H01L29/06 ; H01L21/02 ; H01L29/66
摘要：
A semiconductor structure includes a first semiconducting channel having a plurality of vertical nanowires and a second semiconducting channel having a plurality of vertical nanowires. The first semiconducting channel and the second semiconducting channel are configured to be in a stacked configuration. The plurality of vertical nanowires of the first semiconducting channel are configured to be in alternating positions relative to the plurality of vertical nanowires of the second semiconducting channel.
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