Invention Grant
- Patent Title: Integrated circuit with backside power delivery network and backside transistor
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Application No.: US16874446Application Date: 2020-05-14
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Publication No.: US11257764B2Publication Date: 2022-02-22
- Inventor: Gaspard Hiblot , Geert Van Der Plas
- Applicant: IMEC vzw
- Applicant Address: BE Leuven
- Assignee: IMEC vzw
- Current Assignee: IMEC vzw
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: EP19176249 20190523
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/768 ; H01L21/8234 ; H01L23/50 ; H01L29/66 ; H01L29/78

Abstract:
An integrated circuit (IC) chip that includes a semiconductor substrate including active devices on its front side, and at least part of a power delivery network (PDN) on its back side, is disclosed. In one aspect, the PDN includes a power supply terminal (Vdd) and a reference terminal (Vss) at the back of the IC. A plurality of TSV (Through Semiconductor Via) connections through the substrate bring the power to the front of the substrate. A field effect transistor is integrated at the back side of the substrate, and includes a source electrode, a drain electrode, and a gate electrode, which are contacted at the back side of the substrate. The IC further includes a gate control terminal for controlling the gate voltage. The transistor is coupled between the power supply terminal and one or more of the active devices of the IC.
Public/Granted literature
- US20200373242A1 INTEGRATED CIRCUIT WITH BACKSIDE POWER DELIVERY NETWORK AND BACKSIDE TRANSISTOR Public/Granted day:2020-11-26
Information query
IPC分类: