- 专利标题: Superconducting devices with ferromagnetic barrier junctions
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申请号: US17001461申请日: 2020-08-24
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公开(公告)号: US11264089B1公开(公告)日: 2022-03-01
- 发明人: Oleg A. Mukhanov , Alan M. Kadin , Ivan P. Nevirkovets , Igor V. Vernik
- 申请人: SeeQC Inc.
- 申请人地址: US NY Elmsford
- 专利权人: SeeQC Inc.
- 当前专利权人: SeeQC Inc.
- 当前专利权人地址: US NY Elmsford
- 代理机构: Hoffberg & Associates
- 代理商 Steven M. Hoffberg
- 主分类号: G11C11/44
- IPC分类号: G11C11/44 ; G11C11/16 ; H01L39/22 ; H01L39/24 ; H01L39/02
摘要:
A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.