Invention Grant
- Patent Title: Radical monitoring apparatus and plasma apparatus including the monitoring apparatus
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Application No.: US16814040Application Date: 2020-03-10
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Publication No.: US11264219B2Publication Date: 2022-03-01
- Inventor: Kwangtae Hwang , Jinyong Kim , Iksoo Kim , Geumbi Mun , Junwon Lee , Jiwoon Im
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0045133 20190417,KR10-2019-0092009 20190729
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.
Public/Granted literature
- US20200335313A1 RADICAL MONITORING APPARATUS AND PLASMA APPARATUS INCLUDING THE MONITORING APPARATUS Public/Granted day:2020-10-22
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