Invention Grant
- Patent Title: Electro-optic device with semiconductor junction area and related methods
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Application No.: US16185654Application Date: 2018-11-09
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Publication No.: US11269140B2Publication Date: 2022-03-08
- Inventor: Jean-Robert Manouvrier , Jean-Francois Carpentier , Patrick LeMaitre
- Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Montrouge; FR Crolles
- Assignee: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Montrouge; FR Crolles
- Agency: Slater Matsil, LLP
- Main IPC: G02B6/124
- IPC: G02B6/124 ; G02B6/30 ; G02F1/025 ; G02B6/293

Abstract:
An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.
Public/Granted literature
- US20190094462A1 ELECTRO-OPTIC DEVICE WITH SEMICONDUCTOR JUNCTION AREA AND RELATED METHODS Public/Granted day:2019-03-28
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