Invention Grant
- Patent Title: Dual-mode high-bandwidth SRAM with self-timed clock circuit
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Application No.: US17223764Application Date: 2021-04-06
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Publication No.: US11270761B2Publication Date: 2022-03-08
- Inventor: Hoan Huu Nguyen , Francois Ibrahim Atallah , Keith Alan Bowman , Daniel Yingling , Jihoon Jeong , Yu Pu
- Applicant: Qualcomm Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: G11C11/417
- IPC: G11C11/417 ; G11C7/06 ; G11C7/10 ; G11C7/22 ; G11C11/418 ; G11C11/419

Abstract:
A dual-mode memory is provided that includes a self-timed clock circuit for asserting a sense enable signal for a sense amplifier. In a low-bandwidth read mode, the self-timed clock circuit asserts the sense enable signal only once during a memory clock cycle. The sense amplifier then senses only a single bit from a group of multiplexed columns. In a high-bandwidth read mode, the self-timed clock circuit successively asserts the sense enable signal so that the sense amplifier successively senses bits from the multiplexed columns.
Public/Granted literature
- US20210225435A1 DUAL-MODE HIGH-BANDWIDTH SRAM WITH SELF-TIMED CLOCK CIRCUIT Public/Granted day:2021-07-22
Information query
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