Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US17038085Application Date: 2020-09-30
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Publication No.: US11270933B2Publication Date: 2022-03-08
- Inventor: Sang-Il Han , Sunghee Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0177895 20191230
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L23/00

Abstract:
A semiconductor device comprises a substrate including a cell array region and a peripheral circuit region that surrounds the cell array region. The cell array region includes landing pads disposed on the substrate and first bottom electrodes disposed on and connected to corresponding landing pads. The peripheral circuit region includes conductive lines disposed on the substrate, a first conductive pad disposed on and spaced apart from the conductive lines, a dielectric pattern disposed between the conductive lines and the first conductive pad, and a plurality of second bottom electrodes disposed on and connected in common to the first conductive pad. A height of each of the first bottom electrodes is greater than a height of each of the second bottom electrodes. Top surfaces of the first bottom electrodes are located at a same level as a level of top surfaces of the second bottom electrodes.
Public/Granted literature
- US20210202371A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-07-01
Information query
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