Invention Grant
- Patent Title: P-type field effect transistor having channel region with top portion and bottom portion
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Application No.: US16836953Application Date: 2020-04-01
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Publication No.: US11271078B2Publication Date: 2022-03-08
- Inventor: Shi-You Liu , Tsai-Yu Wen , Ching-I Li , Ya-Yin Hsiao , Chih-Chiang Wu , Yu-Chun Liu , Ti-Bin Chen , Shao-Ping Chen , Huan-Chi Ma , Chien-Wen Yu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW107101053 20180111
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/66 ; H01L21/324 ; H01L21/265 ; H01L21/8234
Abstract:
A p-type field effect transistor (pFET) includes a gate structure on a substrate, a channel region in the substrate directly under the gate structure, and a source/drain region adjacent to two sides of the gate structure. Preferably, the channel region includes a top portion and a bottom portion, in which a concentration of germanium in the bottom portion is lower than a concentration of germanium in the top portion and a depth of the top portion is equal to a depth of the bottom portion.
Public/Granted literature
- US20200235208A1 P-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-07-23
Information query
IPC分类:
