Semiconductor light emitting element
Abstract:
A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at the outer peripheral region of the n-side semiconductor layer.
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