Invention Grant
- Patent Title: Semiconductor light emitting element
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Application No.: US17115082Application Date: 2020-12-08
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Publication No.: US11271146B2Publication Date: 2022-03-08
- Inventor: Yasuhiro Miki , Koichi Takenaga
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JPJP2018-143113 20180731
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/62 ; H01L33/36

Abstract:
A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at the outer peripheral region of the n-side semiconductor layer.
Public/Granted literature
- US20210119094A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2021-04-22
Information query
IPC分类: