Invention Grant
- Patent Title: 3D semiconductor device and structure
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Application No.: US17472667Application Date: 2021-09-12
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Publication No.: US11276687B2Publication Date: 2022-03-15
- Inventor: Zvi Or-Bach , Brian Cronquist
- Applicant: Monolithic 3D Inc.
- Applicant Address: US OR Klamath Falls
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US OR Klamath Falls
- Agency: Patent PC
- Agent Bao Tran
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/36 ; H01L23/50 ; H01L23/60 ; H01L21/324 ; H01L23/522 ; H01L23/528 ; H01L23/00 ; H01L29/78

Abstract:
A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; a plurality of connection paths, where the plurality of connection paths provide first connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, and where the third layer includes crystalline silicon; and at least one temperature sensor.
Public/Granted literature
- US20210407991A1 3D SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2021-12-30
Information query
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