- 专利标题： Manufacturing method of composite oxide and manufacturing method of power storage device
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申请号： US16388904申请日： 2019-04-19
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公开(公告)号： US11283075B2公开(公告)日： 2022-03-22
- 发明人: Takuya Miwa , Kuniharu Nomoto , Junpei Momo
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： JP Atsugi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2011-189027 20110831
- 主分类号： H01M4/00
- IPC分类号： H01M4/00 ; H01M4/58 ; C01D15/02 ; C01G45/00 ; C01G49/00 ; C01G51/00 ; C01G53/00 ; C30B7/10 ; H01M4/36 ; H01M4/587 ; C30B29/14 ; H01M4/02
摘要：
An object is to reduce variation in shape of crystals that are to be formed. Solutions containing respective raw materials are made in an environment where an oxygen concentration is lower than that in air, the solutions containing the respective raw materials are mixed in an environment where an oxygen concentration is lower than that in air to form a mixture solution, and with use of the mixture solution, a composite oxide is formed by a hydrothermal method.
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