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公开(公告)号：US20250072212A1
公开(公告)日：2025-02-27
申请号：US18723662
申请日：2022-12-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Daiki NAKAMURA , Hisao IKEDA , Ryo HATSUMI , Takeya HIROSE , Yosuke TSUKAMOTO
IPC: H10K59/121 , H10K59/35
Abstract: An electronic device with low power consumption is provided. The electronic device includes a first display device and a second display device. The first display device includes a first display portion, and the second display device includes a second display portion. A plurality of first pixels are arranged in the first display portion, and a plurality of second pixels are arranged in the second display portion. The first display device overlaps with the second display device. The second display portion is provided to surround at least part of the first display portion in a plan view. The area occupied by each of the first pixels is smaller than the area occupied by each of the second pixels.
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公开(公告)号：US20250068669A1
公开(公告)日：2025-02-27
申请号：US18945924
申请日：2024-11-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kunitaka YAMAMOTO , Junpei MOMO , Kazuki HIGASHI
IPC: G06F16/35 , G06F16/93 , G06F40/268
Abstract: A document search system that enables efficient document search regardless of the ability of a user is achieved. Document search is performed using a document search system in which database document data is stored. After first document data and second document data are input to the document search system, the document search system extracts a plurality of terms from the first document data. The extraction of the terms is performed using morphological analysis, for example. Next, the extracted terms are weighted on the basis of the second document data. For example, texts included in a document represented by the second document data are classified into first and second texts. Among the terms extracted from the first document data, the weight of the term included in the first text is set larger than the weights of the other terms. The classification of the texts can be performed in accordance with a rule basis or using machine learning. After that, the similarity of the database document data to the first document data is calculated on the basis of the weighted term.
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公开(公告)号：US12237389B2
公开(公告)日：2025-02-25
申请号：US17288680
申请日：2019-10-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kenichi Okazaki , Masami Jintyou , Yukinori Shima
IPC: H01L29/423 , H01L29/49 , H01L29/66 , H01L27/12 , H01L29/786
Abstract: A highly reliable semiconductor device with favorable electrical characteristics is provided. A semiconductor device includes a semiconductor layer, an insulating layer, a metal oxide layer, and a conductive layer. The semiconductor layer, the insulating layer, the metal oxide layer, and the conductive layer are stacked in this order. The semiconductor layer includes a first region, a pair of second regions, and a pair of third regions. The first region overlaps the metal oxide layer. The second regions sandwich the first region, overlap the insulating layer, and do not overlap the metal oxide layer. The third regions sandwich the first region and the pair of second regions, and do not overlap the insulating layer. The third region includes a portion having a lower resistance than the first region. The second region includes a portion having a higher resistance than the third region.
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公开(公告)号：US20250063820A1
公开(公告)日：2025-02-20
申请号：US18938670
申请日：2024-11-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Jun KOYAMA
IPC: H01L27/12 , G09G3/3266 , G09G3/36 , G11C19/28
Abstract: The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register.
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公开(公告)号：US20250061746A1
公开(公告)日：2025-02-20
申请号：US18939631
申请日：2024-11-07
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Tatsuya OKANO , Teppei OGUNI , Kengo AKIMOTO
IPC: G06V40/20 , G06V10/74 , G06V10/762 , G06V10/82 , G06V40/16
Abstract: A data processing system that can sense fatigue or the like using a neural network is provided. First, a reference image is obtained on the basis of first to n-th images (n is an integer greater than or equal to 2). Next, the first to n-th images and the reference image are input to an input layer of a neural network, first to n-th estimated ages and a reference estimated age are output from an output layer, and first to n-th data and reference data are output from an intermediate layer. After that, first to n-th coordinates are obtained in each of which an x-coordinate is a value corresponding to a difference between the reference estimated age and the first to n-th estimated ages and a y-coordinate is a value corresponding to the degree of similarity between the reference data and the first to n-th data. Next, a query image is input to the input layer, a query estimated age is output from the output layer, query data is output from the intermediate layer, and query coordinates are obtained using the output results. Whether a person of a face included in the query image feels fatigue or the like is determined on the basis of the first to n-th coordinates and the query coordinates.
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公开(公告)号：US12230696B2
公开(公告)日：2025-02-18
申请号：US18606052
申请日：2024-03-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Hideomi Suzawa , Shinya Sasagawa , Motomu Kurata , Masashi Tsubuku
IPC: H01L29/66 , H01L21/02 , H01L27/12 , H01L27/146 , H01L29/786
Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.
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公开(公告)号：US20250056837A1
公开(公告)日：2025-02-13
申请号：US18928429
申请日：2024-10-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Junichi KOEZUKA , Masami JINTYOU , Yukinori SHIMA , Takashi HAMOCHI , Yasutaka NAKAZAWA
IPC: H01L29/786 , G02F1/1333 , G02F1/1335 , G02F1/1339 , G02F1/1368 , H01L27/12 , H01L29/10 , H01L29/45 , H10K59/121
Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.
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8.发明申请
公开(公告)号：US20250056786A1
公开(公告)日：2025-02-13
申请号：US18723731
申请日：2022-12-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Ryota HODO , Tatsuya ONUKI , Kiyoshi KATO
IPC: H10B12/00
Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor; the transistor includes an oxide, a first conductor and a second conductor over the oxide, a first insulator that is placed over the first conductor and the second conductor and includes a first opening and a second opening, a second insulator in the first opening of the first insulator, and a third conductor over the second insulator; the first opening in the first insulator includes a region overlapping with the oxide; the third conductor includes a region overlapping with the oxide with the second insulator therebetween; the capacitor includes the second conductor, a third insulator in the second opening of the first insulator, and a fourth conductor over the third insulator; and the distance between the first conductor and the second conductor is smaller than the width of the first opening in a cross-sectional view of the transistor in a channel length direction.
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公开(公告)号：US20250054523A1
公开(公告)日：2025-02-13
申请号：US18932891
申请日：2024-10-31
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Takeshi AOKI , Yoshiyuki KUROKAWA , Munehiro KOZUMA , Takuro KANEMURA , Tatsunori INOUE
Abstract: A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell. The current mirror circuit is electrically connected to the first wiring and the second wiring.
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公开(公告)号：US12225748B2
公开(公告)日：2025-02-11
申请号：US18788835
申请日：2024-07-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi Seo , Tatsuyoshi Takahashi , Takeyoshi Watabe , Satomi Mitsumori
IPC: H10K50/12 , C07F15/00 , C09K11/06 , H10K50/11 , H10K50/15 , H10K50/16 , H10K59/12 , H10K59/38 , H10K59/40 , H10K85/30 , H10K85/60 , H10K101/00 , H10K101/10 , H10K101/30 , H10K101/40
Abstract: A light-emitting element with high emission efficiency. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than the LUMO level of the second organic compound. The HOMO level of the first organic compound is lower than the HOMO level of the second organic compound. The HOMO level of the guest material is higher than the HOMO level of the second organic compound. The energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than the energy difference between the LUMO level of the first organic compound and the HOMO level of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.
