Invention Grant
- Patent Title: Method for fabricating a semiconductor device
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Application No.: US16530954Application Date: 2019-08-02
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Publication No.: US11289604B2Publication Date: 2022-03-29
- Inventor: Tsung-Hsun Tsai
- Applicant: United Microelectronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corporation
- Current Assignee: United Microelectronics Corporation
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L27/088 ; H01L21/02 ; H01L21/3205 ; H01L29/45
Abstract:
A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.
Public/Granted literature
- US20210036152A1 Method for Fabricating a Semiconductor Device Public/Granted day:2021-02-04
Information query
IPC分类:
