Invention Grant
- Patent Title: Transmon qubits with trenched capacitor structures
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Application No.: US16381563Application Date: 2019-04-11
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Publication No.: US11289637B2Publication Date: 2022-03-29
- Inventor: Vivekananda P. Adiga , Martin O. Sandberg , Jerry M. Chow , Hanhee Paik
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Garg Law Firm, PLLC
- Agent Rakesh Garg; Douglas Pearson
- Main IPC: H01L39/22
- IPC: H01L39/22 ; H01L39/02 ; G06N10/00 ; H01L39/12 ; H01L39/24

Abstract:
A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.
Public/Granted literature
- US20200328338A1 TRANSMON QUBITS WITH TRENCHED CAPACITOR STRUCTURES Public/Granted day:2020-10-15
Information query
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