Invention Grant
- Patent Title: Memory with dynamic voltage scaling
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Application No.: US16945303Application Date: 2020-07-31
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Publication No.: US11295803B2Publication Date: 2022-04-05
- Inventor: Jungwon Suh , Michael Hawjing Lo , Dexter Tamio Chun , Xavier Loic Leloup , Laurent Rene Moll
- Applicant: QUALCOMM Incorporated , Candace Sachi Chun
- Applicant Address: US CA San Diego; US CA San Diego
- Assignee: QUALCOMM Incorporated,Candace Sachi Chun
- Current Assignee: QUALCOMM Incorporated,Candace Sachi Chun
- Current Assignee Address: US CA San Diego; US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4074 ; G11C11/409

Abstract:
Methods and apparatuses for to memories using dynamic voltage scaling are presented. The apparatus includes memory configured to communicate with a host. The memory includes a peripheral portion and a memory array. The memory is further configured to receive, from at least one power management circuit, a first supply voltage and a second supply voltage. The memory further includes a switch circuit. The switch circuit is configured to selectively provide the first supply voltage and the second supply voltage to the peripheral portion. The first supply voltage is static and has a first voltage range. The second supply voltage has a low second voltage range and a high second voltage range.
Public/Granted literature
- US20210065772A1 MEMORY WITH DYNAMIC VOLTAGE SCALING Public/Granted day:2021-03-04
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