Invention Grant
- Patent Title: Electrostatic discharge protection in integrated circuits
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Application No.: US16721442Application Date: 2019-12-19
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Publication No.: US11296040B2Publication Date: 2022-04-05
- Inventor: Adel A. Elsherbini , Feras Eid , Johanna M. Swan , Aleksandar Aleksov , Veronica Aleman Strong
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/60 ; H01L23/48 ; H01L27/02 ; H01L23/00 ; H01L23/498

Abstract:
Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). For example, in some embodiments, an IC package support may include: a first conductive structure in a dielectric material; a second conductive structure in the dielectric material; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a polymer, and the material is different from the dielectric material. The material may act as a dielectric material below a trigger voltage, and as a conductive material above the trigger voltage.
Public/Granted literature
- US20210193596A1 ELECTROSTATIC DISCHARGE PROTECTION IN INTEGRATED CIRCUITS Public/Granted day:2021-06-24
Information query
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