Invention Grant
- Patent Title: Power gate with metal on both sides
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Application No.: US15746799Application Date: 2015-09-25
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Publication No.: US11296197B2Publication Date: 2022-04-05
- Inventor: Donald W. Nelson
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2015/052375 WO 20150925
- International Announcement: WO2017/052626 WO 20170330
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L27/088 ; H01L29/66 ; H01L29/78

Abstract:
An apparatus including a circuit structure including a device stratum including a plurality of transistor devices each including a first side defined by a gate electrode and an opposite second side; and a gated supply grid disposed on the second side of the structure, wherein a drain of the at least one of the plurality of transistor devices is coupled to the gated supply grid. A method including providing a supply from a package substrate to power gate transistors in a device layer of a circuit structure, the transistors coupled to circuitry operable to receive a gated supply from the power gate transistors; and distributing the gated supply from the power gate transistors to the circuitry using a grid on an underside of the device layer.
Public/Granted literature
- US20200066854A1 POWER GATE WITH METAL ON BOTH SIDES Public/Granted day:2020-02-27
Information query
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