Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16184722Application Date: 2018-11-08
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Publication No.: US11296236B2Publication Date: 2022-04-05
- Inventor: Georgios Vellianitis
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L21/02 ; H01L29/66 ; H01L21/311 ; H01L21/306 ; H01L21/324
Abstract:
A semiconductor device includes a substrate, a plurality of nanowires, and a gate stack. The nanowires are over the substrate. Each of the nanowires includes a channel region, the channel region having top and bottom surfaces and a first sidewall between the top and bottom surfaces, in which the first sidewall of the channel region has a (111) crystalline orientation. The gate stack is over the channel regions of the nanowires.
Public/Granted literature
- US20200035840A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-01-30
Information query
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