Invention Grant
- Patent Title: Switch IC, high-frequency module, and communication apparatus
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Application No.: US17062661Application Date: 2020-10-05
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Publication No.: US11296738B2Publication Date: 2022-04-05
- Inventor: Yusuke Naniwa , Hideki Muto
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo
- Agency: Keating & Bennett, LLP
- Priority: JPJP2016-221000 20161111
- Main IPC: H04B1/10
- IPC: H04B1/10 ; H04B1/48 ; H04B1/38 ; H04B1/00

Abstract:
An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.
Public/Granted literature
- US20210021292A1 SWITCH IC, HIGH-FREQUENCY MODULE, AND COMMUNICATION APPARATUS Public/Granted day:2021-01-21
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