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公开(公告)号：US10141911B2
公开(公告)日：2018-11-27
申请号：US15669046
申请日：2017-08-04
发明人： Hideki Muto
摘要： A high-frequency module includes a plurality of filters, a switch that commonly connects a plurality of paths, and a low noise amplifier that amplifies a high-frequency signal input from the plurality of filters with the switch interposed therebetween, wherein paths in which first and second filters are respectively provided among the plurality of paths connect the respective filters and the switch without connecting impedance elements, and each of the first and second filters has an output impedance located in a matching region between a NF matching impedance at which an NF of the low noise amplifier is minimum and a gain matching impedance at which a gain of the low noise amplifier is maximum in its respective pass band thereof on a Smith chart.
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公开(公告)号：US09929719B2
公开(公告)日：2018-03-27
申请号：US15016872
申请日：2016-02-05
发明人： Morio Takeuchi , Hideki Muto , Masanori Kato
CPC分类号： H03H9/725 , H03H9/0009 , H03H9/0542 , H03H9/0566 , H03H9/52 , H03H9/605 , H03H9/6406 , H03H9/6483
摘要： A high-frequency module includes a connection line that interconnects a first SAW resonator and a second SAW resonator, and is connected to a second shunt connection terminal through a third SAW resonator. A connection line interconnecting a fourth SAW resonator and a second series connection terminal is connected to the second shunt connection terminal through a fifth SAW resonator. The second shunt connection terminal is connected to a ground through an inductor. A matching circuit is connected between a first series connection terminal and a first external connection terminal. The matching circuit is inductively or capacitively coupled to the inductor.
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公开(公告)号：US09337797B2
公开(公告)日：2016-05-10
申请号：US14688029
申请日：2015-04-16
发明人： Hideki Muto
IPC分类号： H03H7/01 , H03F3/19 , H05K1/02 , H03F3/21 , H03F1/56 , H03F3/195 , H04B1/18 , H05K1/16 , H03H1/00
CPC分类号： H03H7/0115 , H01L2224/48227 , H03F1/565 , H03F3/19 , H03F3/195 , H03F3/21 , H03F2200/165 , H03F2200/447 , H03H7/0161 , H03H7/1775 , H03H2001/0085 , H04B1/18 , H05K1/0206 , H05K1/0243 , H05K1/0298 , H05K1/162 , H05K1/165
摘要： A high frequency module includes a multilayer substrate, a power amplifier, thermal vias, and a bandpass filter. The power amplifier is mounted on the multilayer substrate. The thermal vias are provided in the multilayer substrate directly below the power amplifier and configured to dissipate heat of the power amplifier. The bandpass filter is provided in the multilayer substrate and connected to the power amplifier. The thermal via defines an inductor included in the bandpass filter. The bandpass filter overlaps the power amplifier when viewed in a lamination direction of the multilayer substrate.
摘要翻译： 高频模块包括多层衬底，功率放大器，热通孔和带通滤波器。 功率放大器安装在多层基板上。 热通孔设置在功率放大器正下方的多层基板中，并配置为消散功率放大器的热量。 带通滤波器设置在多层基板中并连接到功率放大器。 热通道定义了带通滤波器中包含的电感器。 当从多层基板的层叠方向观察时，带通滤波器与功率放大器重叠。
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公开(公告)号：US11348887B2
公开(公告)日：2022-05-31
申请号：US17161882
申请日：2021-01-29
发明人： Yusuke Naniwa , Hideki Muto
IPC分类号： H01L23/66 , H01L23/31 , H01L23/538 , H01L23/552 , H01Q1/22
摘要： A radio-frequency module includes: a module substrate having first and second main surfaces; a semiconductor IC having third and fourth main surfaces and mounted on the first main surface with the third main surface between the module substrate and the fourth main surface; and first and second electrodes extending perpendicularly to the first main surface. The cross-sectional area of the second electrodes is smaller than the cross-sectional area of the first electrodes. The semiconductor IC viewed in plan has first and second sides parallel to each other and third and fourth sides parallel to each other. The first electrodes are distributed over a first region between the first side and a side facing the first side and a second region between the second side and a side facing the second side. The second electrodes are in a third region between the third side and a side facing the third side.
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公开(公告)号：US09973170B2
公开(公告)日：2018-05-15
申请号：US15045320
申请日：2016-02-17
发明人： Hideki Muto
CPC分类号： H03H9/725 , H03H9/0057 , H03H9/542 , H03H9/64 , H03H9/706
摘要： In a high-frequency module, a phase and amplitude of a high-frequency signal from a connection conductor between filter devices change due to the signal being transmitted by a takeout circuit unit. When the high-frequency signal at a third external connection terminal is a suppression signal and a high-frequency signal passing through the first filter circuit is a suppression-target signal, the transmission distance in the takeout circuit unit is such that the phase of the suppression signal is approximately inverted with respect to the phase of the suppression-target signal and the suppression signal has approximately the same amplitude as the suppression-target signal. The suppression signal is mixed with the suppression-target signal and components outside of the pass band are cancelled out and the attenuation characteristics of the filter circuit are enhanced.
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公开(公告)号：US11296738B2
公开(公告)日：2022-04-05
申请号：US17062661
申请日：2020-10-05
发明人： Yusuke Naniwa , Hideki Muto
摘要： An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.
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公开(公告)号：US11121733B2
公开(公告)日：2021-09-14
申请号：US16831929
申请日：2020-03-27
发明人： Yusuke Naniwa , Hideki Muto , Yukiya Yamaguchi , Shun Harada
摘要： A semiconductor device includes a base, a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including plural first switches, and an amplifier unit disposed on the base, the amplifier unit including plural amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit. In plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plural amplifier circuits is disposed in each of the first region, the second region, and the third region.
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公开(公告)号：US11463050B2
公开(公告)日：2022-10-04
申请号：US16832295
申请日：2020-03-27
摘要： A radio frequency circuit includes a substrate, a first terminal disposed on a first principal surface of the substrate, a second terminal disposed on the first principal surface, a first-surface mounted component disposed on the first principal surface or inside the substrate, and a second-surface mounted component disposed on a second principal surface of the substrate which is opposite the first principal surface. A radio-frequency signal, which is input to the first terminal, is transmitted, for output from the second terminal, so as to make at least one round trip between the first principal surface and the second-surface mounted component, which is disposed on the second principal surface, through wiring lines disposed in the substrate.
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公开(公告)号：US11336238B2
公开(公告)日：2022-05-17
申请号：US16161117
申请日：2018-10-16
发明人： Hideki Muto
摘要： A high-frequency module includes a plurality of filters, a switch that commonly connects a plurality of paths, and a low noise amplifier that amplifies a high-frequency signal input from the plurality of filters with the switch interposed therebetween, wherein paths in which first and second filters are respectively provided among the plurality of paths connect the respective filters and the switch without connecting impedance elements, and each of the first and second filters has an output impedance located in a matching region between a NF matching impedance at which an NF of the low noise amplifier is minimum and a gain matching impedance at which a gain of the low noise amplifier is maximum in its respective pass band thereof on a Smith chart.
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公开(公告)号：US10608694B2
公开(公告)日：2020-03-31
申请号：US16451522
申请日：2019-06-25
发明人： Hideki Muto
摘要： A high-frequency module (20) includes a reception-side filter (21) that uses a first frequency band as a pass band and a second frequency band as an attenuation band, an LNA (23), and a matching circuit (22) disposed between the reception-side filter (21) and the LNA (23). In a Smith chart, the matching circuit (22) makes an interval between impedance in the second frequency band of the reception-side filter (21) and a second gain circle center point indicating impedance at which gain in the second frequency band of the LNA (23) is maximized greater than an interval between impedance in the first frequency band of the reception-side filter (21) and a first gain circle center point indicating impedance at which gain in the first frequency band of the LNA (23) is maximized.
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