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    High-frequency module and communication apparatus
    1.
    发明授权
    High-frequency module and communication apparatus 有权

    公开(公告)号：US10141911B2

    公开(公告)日：2018-11-27

    申请号：US15669046

    申请日：2017-08-04

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hideki Muto

    IPC: H03H7/46 ,  H03F1/56 ,  H03F3/195

    Abstract: A high-frequency module includes a plurality of filters, a switch that commonly connects a plurality of paths, and a low noise amplifier that amplifies a high-frequency signal input from the plurality of filters with the switch interposed therebetween, wherein paths in which first and second filters are respectively provided among the plurality of paths connect the respective filters and the switch without connecting impedance elements, and each of the first and second filters has an output impedance located in a matching region between a NF matching impedance at which an NF of the low noise amplifier is minimum and a gain matching impedance at which a gain of the low noise amplifier is maximum in its respective pass band thereof on a Smith chart.

    Radio frequency module and communication device
    4.
    发明授权
    Radio frequency module and communication device 有权

    公开(公告)号：US11962340B2

    公开(公告)日：2024-04-16

    申请号：US17661055

    申请日：2022-04-28

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hideki Muto

    IPC: H04B1/401 ,  H04B1/04 ,  H04B1/405 ,  H04B1/44

    CPC classification number: H04B1/401 ,  H04B1/0458 ,  H04B1/405 ,  H04B1/44

    Abstract: Isolation between the first path and second path is increased. A radio frequency module includes a first inductor, a second inductor, a third inductor, and a switch. The first inductor is provided in a first path through which a first communication signal travels. The second inductor is provided in a second path through which a second communication signal travels, the second path being used simultaneously with the first path. The third inductor is provided in a third path through which a third communication signal travels, the third path not being used simultaneously with the first path. The switch is provided between ground and a node in the third path and is connected to the third inductor. The third inductor is arranged between the first inductor and the second inductor.

    Radio-frequency module and communication device
    5.
    发明授权
    Radio-frequency module and communication device 有权

    公开(公告)号：US11348887B2

    公开(公告)日：2022-05-31

    申请号：US17161882

    申请日：2021-01-29

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Yusuke Naniwa ,  Hideki Muto

    IPC: H01L23/66 ,  H01L23/31 ,  H01L23/538 ,  H01L23/552 ,  H01Q1/22

    Abstract: A radio-frequency module includes: a module substrate having first and second main surfaces; a semiconductor IC having third and fourth main surfaces and mounted on the first main surface with the third main surface between the module substrate and the fourth main surface; and first and second electrodes extending perpendicularly to the first main surface. The cross-sectional area of the second electrodes is smaller than the cross-sectional area of the first electrodes. The semiconductor IC viewed in plan has first and second sides parallel to each other and third and fourth sides parallel to each other. The first electrodes are distributed over a first region between the first side and a side facing the first side and a second region between the second side and a side facing the second side. The second electrodes are in a third region between the third side and a side facing the third side.

    High-frequency module
    6.
    发明授权
    High-frequency module 有权

    公开(公告)号：US09973170B2

    公开(公告)日：2018-05-15

    申请号：US15045320

    申请日：2016-02-17

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hideki Muto

    IPC: H03H9/72 ,  H03H9/54 ,  H03H9/64 ,  H03H9/70 ,  H03H9/00

    CPC classification number: H03H9/725 ,  H03H9/0057 ,  H03H9/542 ,  H03H9/64 ,  H03H9/706

    Abstract: In a high-frequency module, a phase and amplitude of a high-frequency signal from a connection conductor between filter devices change due to the signal being transmitted by a takeout circuit unit. When the high-frequency signal at a third external connection terminal is a suppression signal and a high-frequency signal passing through the first filter circuit is a suppression-target signal, the transmission distance in the takeout circuit unit is such that the phase of the suppression signal is approximately inverted with respect to the phase of the suppression-target signal and the suppression signal has approximately the same amplitude as the suppression-target signal. The suppression signal is mixed with the suppression-target signal and components outside of the pass band are cancelled out and the attenuation characteristics of the filter circuit are enhanced.

    Switch IC, high-frequency module, and communication apparatus
    7.
    发明授权
    Switch IC, high-frequency module, and communication apparatus 有权

    公开(公告)号：US11296738B2

    公开(公告)日：2022-04-05

    申请号：US17062661

    申请日：2020-10-05

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Yusuke Naniwa ,  Hideki Muto

    IPC: H04B1/10 ,  H04B1/48 ,  H04B1/38 ,  H04B1/00

    Abstract: An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.

    Semiconductor device, radio-frequency circuit, and communication apparatus
    8.
    发明授权
    Semiconductor device, radio-frequency circuit, and communication apparatus 有权

    公开(公告)号：US11121733B2

    公开(公告)日：2021-09-14

    申请号：US16831929

    申请日：2020-03-27

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Yusuke Naniwa ,  Hideki Muto ,  Yukiya Yamaguchi ,  Shun Harada

    IPC: H04B1/04 ,  H01L23/66 ,  H04B1/44

    Abstract: A semiconductor device includes a base, a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including plural first switches, and an amplifier unit disposed on the base, the amplifier unit including plural amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit. In plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plural amplifier circuits is disposed in each of the first region, the second region, and the third region.

    Radio frequency circuit and communication apparatus
    9.
    发明授权
    Radio frequency circuit and communication apparatus 有权

    公开(公告)号：US11463050B2

    公开(公告)日：2022-10-04

    申请号：US16832295

    申请日：2020-03-27

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Yusuke Naniwa ,  Hideki Muto ,  Hiroshi Nishikawa ,  Takashi Watanabe ,  Akiko Itabashi

    IPC: H03F3/187 ,  H03F3/195 ,  H04B1/403 ,  H05K1/16

    Abstract: A radio frequency circuit includes a substrate, a first terminal disposed on a first principal surface of the substrate, a second terminal disposed on the first principal surface, a first-surface mounted component disposed on the first principal surface or inside the substrate, and a second-surface mounted component disposed on a second principal surface of the substrate which is opposite the first principal surface. A radio-frequency signal, which is input to the first terminal, is transmitted, for output from the second terminal, so as to make at least one round trip between the first principal surface and the second-surface mounted component, which is disposed on the second principal surface, through wiring lines disposed in the substrate.

    High-frequency module and communication apparatus
    10.
    发明授权
    High-frequency module and communication apparatus 有权

    公开(公告)号：US11336238B2

    公开(公告)日：2022-05-17

    申请号：US16161117

    申请日：2018-10-16

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hideki Muto

    IPC: H03F3/195 ,  H03H7/46 ,  H03F1/56

    Abstract: A high-frequency module includes a plurality of filters, a switch that commonly connects a plurality of paths, and a low noise amplifier that amplifies a high-frequency signal input from the plurality of filters with the switch interposed therebetween, wherein paths in which first and second filters are respectively provided among the plurality of paths connect the respective filters and the switch without connecting impedance elements, and each of the first and second filters has an output impedance located in a matching region between a NF matching impedance at which an NF of the low noise amplifier is minimum and a gain matching impedance at which a gain of the low noise amplifier is maximum in its respective pass band thereof on a Smith chart.

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