Invention Grant
- Patent Title: Method for producing PbTiO3-containing single crystal
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Application No.: US16312109Application Date: 2017-06-28
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Publication No.: US11299818B2Publication Date: 2022-04-12
- Inventor: Kazuhiko Echizenya
- Applicant: JFE MINERAL COMPANY, LTD.
- Applicant Address: JP Tokyo
- Assignee: JFE MINERAL COMPANY, LTD.
- Current Assignee: JFE MINERAL COMPANY, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye
- Priority: JPJP2016-177368 20160912
- International Application: PCT/JP2017/023678 WO 20170628
- International Announcement: WO2018/047445 WO 20180315
- Main IPC: C30B11/04
- IPC: C30B11/04 ; C30B11/02 ; C30B29/32 ; C30B11/00

Abstract:
Provided is a method for producing a single crystal, wherein compositional variations and defects in the single crystal can be prevented and a single crystal having uniform characteristics in the growth direction can be produced at high yield. In this method for producing a single crystal, a PbTiO3-containing single crystal is produced by the vertical Bridgman technique, wherein the thickness of a melt layer containing the melt in a crucible is at least 30 mm.
Public/Granted literature
- US20190226116A1 METHOD FOR PRODUCING PbTiO3-CONTAINING SINGLE CRYSTAL Public/Granted day:2019-07-25
Information query
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