Invention Grant
- Patent Title: Germanium mediated de-oxidation of silicon
-
Application No.: US16791948Application Date: 2020-02-14
-
Publication No.: US11302528B2Publication Date: 2022-04-12
- Inventor: Yong Liang , Vimal Kumar Kamineni
- Applicant: PsiQuantum Corp.
- Applicant Address: US CA Palo Alto
- Assignee: PsiQuantum Corp.
- Current Assignee: PsiQuantum Corp.
- Current Assignee Address: US CA Palo Alto
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/28
Abstract:
A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.
Public/Granted literature
- US20210028015A1 GERMANIUM MEDIATED DE-OXIDATION OF SILICON Public/Granted day:2021-01-28
Information query
IPC分类:
