Invention Grant
- Patent Title: Method of fabricating semiconductor device including dummy via anchored to dummy metal layer
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Application No.: US17018381Application Date: 2020-09-11
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Publication No.: US11302654B2Publication Date: 2022-04-12
- Inventor: Jian-Hong Lin , Kuo-Yen Liu , Hsin-Chun Chang , Tzu-Li Lee , Yu-Ching Lee , Yih-Ching Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/00 ; H01L23/58 ; H01L27/02 ; H01L23/522
Abstract:
A method includes depositing a first dielectric layer over a substrate; forming a first dummy metal layer over the first dielectric layer, wherein the first dummy metal layer has first and second portions laterally separated from each other; depositing a second dielectric layer over the first dummy metal layer; etching an opening having an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first dummy metal layer, and a lower portion in the first dielectric layer, wherein a width of the lower portion of the opening is greater than a width of the middle portion of the opening, and a bottom of the opening is higher than a bottom of the first dielectric layer; and forming a dummy via in the opening and a second dummy metal layer over the dummy via and the second dielectric layer.
Information query
IPC分类:
