Invention Grant
- Patent Title: Group III nitride device and method of fabricating an ohmic contact for a group III nitride-based device
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Application No.: US16694070Application Date: 2019-11-25
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Publication No.: US11302783B2Publication Date: 2022-04-12
- Inventor: Albert Birner , Jan Ropohl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP18208960 20181128
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L29/20 ; H01L21/283 ; H01L29/40 ; H01L29/778
Abstract:
In an embodiment, a Group III nitride device includes a multilayer Group III nitride structure and a first ohmic contact arranged on and forming an ohmic contact to the multilayer Group III nitride device structure. The first ohmic contact includes a base portion having a conductive surface, the conductive surface including a peripheral portion and a central portion, the peripheral portion and the central portion being substantially coplanar and being of differing composition, a conductive via positioned on the central portion of the conductive surface and a contact pad positioned on the conductive via.
Public/Granted literature
- US20200168709A1 Group III Nitride Device and Method of Fabricating an Ohmic Contact for a Group III Nitride-Based Device Public/Granted day:2020-05-28
Information query
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